inchange semiconductor product specification silicon pnp power transistors 2SB886 description ? ? with to-220c package ? complement to type 2sd1196 ? darlington ?high dc current gain ? high current capacity and wide aso ? low saturation voltage applications ?motor drivers, printer ?hammer drivers ? relay drivers, ? voltage regulator control. pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -110 v v ceo collector-emitter voltage open base -100 v v ebo emitter-base voltage open collector -6 v i c collector current (dc) -8 a i cm collector current-peak -12 a t c =25 ?? 40 p c collector dissipation 1.75 w t j junction temperature 150 ?? t stg storage temperature -50~150 ??
inchange semiconductor product specification 2 silicon pnp power transistors 2SB886 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-50ma; r be = ?t -100 v v (br)cbo collector-base breakdown voltage i c =-5ma; i e =0 -110 v v cesat collector-emitter saturation voltage i c =-4a; i b =-8ma -1.0 -1.5 v v besat base-emitter saturation voltage i c =-4a; i b =-8ma -2.0 v i cbo collector cut-off current v cb =-80v; i e =0 -0.1 ma i ebo emitter cut-off current v eb =-5v; i c =0 -3.0 ma f t transition frequency i c =-4a ; v ce =-5v 20 mhz h fe dc current gain i c =-4a ; v ce =-3v 1500 4000 switching times t on turn-on time 0.7 | s t stg storage time 1.4 | s t f fall time i c =-4a;i b1 =-i b2 =-8ma r l =12.5 |? ,duty cycle ? 1% v cc =50v 1.5 | s
inchange semiconductor product specification 3 silicon pnp power transistors 2SB886 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.10mm)
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